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Deposition

Airopak® F2/N2 10% Fluorine in Nitrogen Mixture – Commercial Grade Versum Materials has a long history as the world’s leading provider of Airopak® fluorine gas mixtures for surface modification of plastics and fluoropolymers. Airopak F2/N2 mixtures create barrier properties or alter surface activation of the treated plastic surfaces. Versum Materials supplies 10% and 20% fluorine nitrogen (F2/N2) gas mixtures in individual cylinders and bulk tube trailers globally. Our expert technical…

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Airopak® F2/N2 20% Fluorine in Nitrogen Mixture – Commercial Grade Versum Materials has a long history as the world’s leading provider of Airopak® fluorine gas mixtures for surface modification of plastics and fluoropolymers. Airopak F2/N2 fluorine/nitrogen mixtures create barrier properties or alter surface activation of the treated plastic surfaces. Versum Materials supplies 10% and 20% F2/N2 fluorine nitrogen gas mixtures in individual cylinders and bulk tube trailers globally. Our expert…

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Tungsten Hexafluoride Semiconductor Tungsten Hexafluoride (WF6), Semiconductor grade (99.9%), is a toxic, corrosive, odorless, liquefied gas.

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Trimethylsilane 3MS Semiconductor Semiconductor Grade Trimethylsilane (99.995%) is our standard high-purity offering for Low-k semiconductor applications. Trimethylsilane is a colorless, odorless, and highly-flammable gas.

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Tungsten Hexafluoride Megaclass Tungsten Hexafluoride (WF6), Megaclass grade (99.9995%), is our highest purity grade for silicon semiconductor metallization process applications, offering full metals analysis. Tungsten Hexafluoride is a toxic, corrosive, odorless, liquefied gas.

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Yttrium Precursors Yttrium (Y) oxide is used in the High K dielectrics process as capping layers on other High K films, such as HfO2, or as stabilizers of crystalline forms of High K dielectrics, such as ZrO2.

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Silicon Tetrafluoride VLSI Silicon Tetrafluoride (SiF4) is a source of fluorine for processes requiring controlled concentrations of fluorine present to form low-k films.

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Strontium Precursors Versum Materials offers a series of Strontium (Sr) precursors for Thin Film Deposition of Ultra High K STO (Strontium Titanate) films. These precursors comprise both pure compounds for direct evaporation and formulated mixtures for direct liquid injection through a suitable vaporizer.

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Tellurium Precursors Versum Materials offers a series of advanced Germanium (Ge), Antimony (Sb) and Tellurium (Te) precursors for Thin Film Deposition of phase changing alloys such as GST. These precursors are volatile liquids which are suitable for direct evaporation at modest temperatures.

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Tetraethyl Orthosilicate TEOS Tetraethyl Orthosilicate (TEOS) is used as a semiconductor silicon source for the Thin Film Deposition of doped and undoped silicon dioxide films. It is used as a replacement for silane and other pyrophoric silicon sources.

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