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Deposition - Page 2

Tetrakis Dimethylamino Titanium TDMAT Tetrakis-dimethylamino Titanium (TDMAT) is a liquid chemical source suitable for the chemical vapor deposition of titanium nitride films. TiN films are effective diffusion barriers for IC applications.

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Tetramethylcyclotetrasiloxane TOMCATS Tetramethylcyclotetrasiloxane (TOMCATS) is used as a silicon source for the chemical vapor Thin Film Deposition (CVD) of high quality low dielectric constant films and silicon dioxide films.

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Tetramethylsilane 4MS EXTREMA Tetramethylsilane (4MS) is a precursor for depositing carbon doped silicon films and silicon carbide-like films.

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Titanium Precursors Versum Materials offers a series of advanced Ti precursors for Thin Film Deposition of High K and Ultra High K dielectric films. These closely related compounds allow you to tailor the precursor to suit your processing requirements by selecting for properties such as Thin Film Deposition temperature, Thin Film Deposition rate, vapor pressure, etc. These precursors represent a technological advance…

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Titanium Tetrachloride TiCl4 Titanium Tetrachloride (TiCl4) is a liquid source material for the chemical vapor Thin Film Deposition (CVD) of titanium nitride, titanium dioxide and titanium metal.

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Trichlorosilane Megabit Trichlorosilane (TCS), Megabit® Grade, is our standard high purity grade. Trichlorosilane is used in silicon semiconductor thin film deposition applications.

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Propylene Electronic Propylene (C3H6) is a gas used for building up the Amorphous Carbon Layer (ACL), which works as a hardmask to support photoresist in the etching process.

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Lanthanide Precursors Lanthanide (La) oxide is used in the High K dielectrics process as capping layers on other High K films, such as HfO2, or as stabilizers of crystalline forms of High K dielectrics, such as ZrO2.

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Nitrous Oxide VLSI Nitrous Oxide (N2O) is an oxidant for depositing various types of oxide films.

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Porous Diethyoxymethylsilane (PDEMS) Precursor Porous Diethyoxymethylsilane (PDEMS®) is an organosilicate glass used for ultra-low dielectric constant films for intermetal dielectric applications.

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