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Trimethylsilane 3MS Semiconductor Semiconductor Grade Trimethylsilane (99.995%) is our standard high-purity offering for Low-k semiconductor applications. Trimethylsilane is a colorless, odorless, and highly-flammable gas.

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Tungsten Hexafluoride Megaclass Tungsten Hexafluoride (WF6), Megaclass grade (99.9995%), is our highest purity grade for silicon semiconductor metallization process applications, offering full metals analysis. Tungsten Hexafluoride is a toxic, corrosive, odorless, liquefied gas.

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TYPHOON™ S790 Quartzware Cleaner The Versum Materials TYPHOON Quartzware Cleaner is a self-contained system designed to automatically clean and rinse 200 or 300mm vertical furnace quartzware in a vertical all spray process. TYPHOON offers a faster and cleaner process with improved cost-of-ownership. The tool provides two process chambers with simultaneous independent operation.

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VAPORGUARD Temperature Control System The VAPORGUARD® Temperature Control System is our next-generation controller that provides accurate and stable temperature control for chemicals. It is available in six different models (providing temperature control ranging from 10-115°C.)

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Xenon DiFluoride Electronic Xenon Difluoride (XeF2) is a highly selective isotropic etching gas used in the MEMs market. Versum Materials offers a stable, low-cost supply of XeF2.

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Yttrium Precursors Yttrium (Y) oxide is used in the High K dielectrics process as capping layers on other High K films, such as HfO2, or as stabilizers of crystalline forms of High K dielectrics, such as ZrO2.

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Strontium Precursors Versum Materials offers a series of Strontium (Sr) precursors for Thin Film Deposition of Ultra High K STO (Strontium Titanate) films. These precursors comprise both pure compounds for direct evaporation and formulated mixtures for direct liquid injection through a suitable vaporizer.

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Triethylphosphate Triethylphosphate (TEPO) is a liquid phosphorus source used in depositing PSG and BPSG films for semiconductor applications.

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Tellurium Precursors Versum Materials offers a series of advanced Germanium (Ge), Antimony (Sb) and Tellurium (Te) precursors for Thin Film Deposition of phase changing alloys such as GST. These precursors are volatile liquids which are suitable for direct evaporation at modest temperatures.

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Trifluoromethane Halocarbon 23 Trifluoromethane (CHF3) is an Anisotropic etching gas for forming high aspect ratio features in silicon and silicon oxide. The product is also known as Halocarbon 23.

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