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Titanium Tetrachloride TiCl4 Titanium Tetrachloride (TiCl4) is a liquid source material for the chemical vapor Thin Film Deposition (CVD) of titanium nitride, titanium dioxide and titanium metal.

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Trans-LC® Trans-LC (Trans 1,2-Dichloroethylene) is an ozone-safe liquid chlorine source for use in silicon oxidation and tube cleaning. It features a low toxic hazard rating and is not restricted as an ozone depleting chemical. Trans-LC provides consistent process results and is superior in performance to corrosive HCl. The use of Trans-LC is preferred over any known chlorine sources in the low-temperature…

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Trichlorosilane Megabit Trichlorosilane (TCS), Megabit® Grade, is our standard high purity grade. Trichlorosilane is used in silicon semiconductor thin film deposition applications.

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Silicon Tetrafluoride VLSI Silicon Tetrafluoride (SiF4) is a source of fluorine for processes requiring controlled concentrations of fluorine present to form low-k films.

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Triethylborate Triethylborate (TEB) is a liquid boron source used for Borosilicate (BSG) and Borophosphosilicate (BPSG) glass Thin Film Deposition in low pressure, atmospheric pressure and plasma enhanced CVD systems

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Strontium Precursors Versum Materials offers a series of Strontium (Sr) precursors for Thin Film Deposition of Ultra High K STO (Strontium Titanate) films. These precursors comprise both pure compounds for direct evaporation and formulated mixtures for direct liquid injection through a suitable vaporizer.

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Triethylphosphate Triethylphosphate (TEPO) is a liquid phosphorus source used in depositing PSG and BPSG films for semiconductor applications.

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Tellurium Precursors Versum Materials offers a series of advanced Germanium (Ge), Antimony (Sb) and Tellurium (Te) precursors for Thin Film Deposition of phase changing alloys such as GST. These precursors are volatile liquids which are suitable for direct evaporation at modest temperatures.

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Trifluoromethane Halocarbon 23 Trifluoromethane (CHF3) is an Anisotropic etching gas for forming high aspect ratio features in silicon and silicon oxide. The product is also known as Halocarbon 23.

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Tetraethyl Orthosilicate TEOS Tetraethyl Orthosilicate (TEOS) is used as a semiconductor silicon source for the Thin Film Deposition of doped and undoped silicon dioxide films. It is used as a replacement for silane and other pyrophoric silicon sources.

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