Triethylphosphate Triethylphosphate (TEPO) is a liquid phosphorus source used in depositing PSG and BPSG films for semiconductor applications.
Tellurium Precursors Versum Materials offers a series of advanced Germanium (Ge), Antimony (Sb) and Tellurium (Te) precursors for Thin Film Deposition of phase changing alloys such as GST. These precursors are volatile liquids which are suitable for direct evaporation at modest temperatures.
Trifluoromethane Halocarbon 23 Trifluoromethane (CHF3) is an Anisotropic etching gas for forming high aspect ratio features in silicon and silicon oxide. The product is also known as Halocarbon 23.
Tetraethyl Orthosilicate TEOS Tetraethyl Orthosilicate (TEOS) is used as a semiconductor silicon source for the Thin Film Deposition of doped and undoped silicon dioxide films. It is used as a replacement for silane and other pyrophoric silicon sources.
Trimethylborate Trimethylborate (TMB) is used as a liquid boron dopant in the Thin Film Deposition of Borosilicate (BSG) and Borophosphosilicate (BPSG) glasses to reduce the reflow temperatures of the deposited glass.
Tetrakis Dimethylamino Titanium TDMAT Tetrakis-dimethylamino Titanium (TDMAT) is a liquid chemical source suitable for the chemical vapor deposition of titanium nitride films. TiN films are effective diffusion barriers for IC applications.
Tetramethylcyclotetrasiloxane TOMCATS Tetramethylcyclotetrasiloxane (TOMCATS) is used as a silicon source for the chemical vapor Thin Film Deposition (CVD) of high quality low dielectric constant films and silicon dioxide films.
Tetramethylsilane 4MS EXTREMA Tetramethylsilane (4MS) is a precursor for depositing carbon doped silicon films and silicon carbide-like films.
Titanium Precursors Versum Materials offers a series of advanced Ti precursors for Thin Film Deposition of High K and Ultra High K dielectric films. These closely related compounds allow you to tailor the precursor to suit your processing requirements by selecting for properties such as Thin Film Deposition temperature, Thin Film Deposition rate, vapor pressure, etc. These precursors represent a technological advance…
Titanium Tetrachloride TiCl4 Titanium Tetrachloride (TiCl4) is a liquid source material for the chemical vapor Thin Film Deposition (CVD) of titanium nitride, titanium dioxide and titanium metal.